AP2604GY-HF mosfet equivalent, n-channel enhancement mode power mosfet.
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage .
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The S0T-26 package is widely used for all commercial-industrial applications.
G S
Absolut.
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